STB10NK60Z_08 datasheet(3/19 Pages) STMICROELECTRONICS

Part #	STB10NK60Z

Description	N-channel 650 V, 0.65 廓, 10 A, SuperMESH??Power MOSFET Zener-protected I2PAK, D2PAK, TO-220, TO-220FP, TO-247

PDF	19 Pages

Scroll/Zoom	100%

Manufacturer	STMICROELECTRONICS [STMicroelectronics]

Direct Link	http://www.st.com

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3 / 19 page

STB10NK60Z, STP10NK60Z, STW10NK60Z

Electrical ratings

3/19

Electrical ratings

Table 2.

Absolute maximum ratings

Symbol

Parameter

Value

Unit

TO-220

D²PAK,I²PAK

TO-220FP TO-247

VDS

Drain-source voltage (VGS = 0)

600

VGS

Gate-source voltage

± 30

Drain current (continuous) at TC = 25 °C

10(1)

Limited only by maximum temperature allowed

Drain current (continuous) at TC = 100 °C

5.7

5.7 (1)

5.7

IDM

(2)

Pulse width limited by safe operating area

Drain current (pulsed)

36 (1)

PTOT

Total dissipation at TC = 25 °C

115

156

Derating factor

0.92

0.28

1.25

W/°C

Vesd(G-S) G-S ESD (HBM C=100 pF, R=1.5 k

Ω)

4000

dv/dt (3)

ISD < 10A, di/dt < 200A/µs, VDD =80% V(BR)DSS

Peak diode recovery voltage slope

4.5

V/ns

VISO

Insulation withstand voltage (RMS) from

all three

leads to external heat sink

(t=1 s;TC=25 °C)

2500

Tstg

Operating junction temperature

Storage temperature

-55 to 150

°C

Table 3.

Thermal data

Symbol

Parameter

Value

Unit

TO-220

I²PAK

D²PAK TO-220FP TO-247

Rthj-case Thermal resistance junction-case Max

1.09

3.6

0.8

°C/W

Rthj-pcb

Thermal resistance junction-pcb Max

(when mounted on minimum footprint)

°C/W

Rthj-amb

Thermal resistance junction-amb Max

62.5

°C/W

Maximum lead temperature for soldering

purpose

300

°C

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