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2SC3072 Datasheet(PDF) 1 Page - Guangdong Kexin Industrial Co.,Ltd

Part # 2SC3072
Description  Silicon NPN Epitaxial
PDF  1 Pages
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Manufacturer  KEXIN [Guangdong Kexin Industrial Co.,Ltd]
Direct Link  http://www.kexin.com.cn/index.asp
Logo KEXIN - Guangdong Kexin Industrial Co.,Ltd

2SC3072 Datasheet(HTML) 1 Page - Guangdong Kexin Industrial Co.,Ltd

  2SC3072 Datasheet HTML 1Page - Guangdong Kexin Industrial Co.,Ltd  
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SMD Type
Transistors
1
2.3
0.60+0.1
-0.1
6.50+0.15
-0.15
0.80+0.1
-0.1
4.60+0.15
-0.15
5.30+0.2
-0.2
2.30+0.1
-0.1
0.50+0.8
-0.7
0.127
max
TO-252
Unit: mm
1 Base
2 Collector
3 Emitter
www.kexin.com.cn
Silicon NPN Epitaxial
2SC3072
Features
High DC current gain.
Low collector saturation voltage.
High power dissipation.
Absolute Maximum Ratings Ta = 25
Parameter
Symbol
Rating
Unit
Collector-base voltage
VCBO
50
V
Collector-emitter voltage
VCEO
20
V
Emitter-base voltage
VEBO
8V
Collector current
IC
5A
Collector current pulse *
ICP
8A
Base current
IB
0.5
A
Collector power dissipation
Ta =25
1.0
W
Tc =25
10
W
Junction temperature
Tj
150
Storage temperature
Tstg
-55to+150
* Pulse test: Pulse width = 10 ms (max), duty cycle = 30% (max)
PC
Electrical Characteristics Ta = 25
Parameter
Symbol
Testconditons
Min
Typ
Max
Unit
Collector cut-off current
ICBO
VCB =20V, IE = 0
100
nA
Emitter cut-off current
IEBO
VEB =8V, IC = 0
100
nA
Collector-emitter breakdown voltage
V(BR)CEO IC =10mA, IB =0
20
V
VCE =2V, IC = 0.5A
140
450
VCE =2V, IC =4A
70
Collector-emitter saturation voltage
VCE (sat) IC =4A, IB = 0.1 A
1.0
V
Base-emitter voltage
VBE
VCE =2V, IC =4A
1.5
V
Transition frequency
fT
VCE =2V, IC = 0.5 A
100
MHz
Collector output capacitance
Cob
VCB =10V, IE = 0, f = 1 MHz
40
pF
DC current gain
hFE
hFE Classification
Marking
Rank
A
B
C
hFE
140
240
200
330
300
450
C3072


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