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BA982 Datasheet(PDF) 1 Page - Vishay Siliconix |
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BA982 Datasheet(HTML) 1 Page - Vishay Siliconix |
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1 / 3 page ![]() BA982.BA983 Vishay Telefunken Rev. 2, 01-Apr-99 1 (3) www.vishay.de • FaxBack +1-408-970-5600 Document Number 85534 Silicon Planar Diodes Features D Low differential forward resistance D Low diode capacitance D High reverse impedance D Quadro Melf package Applications Band switching in VHF–tuners 96 12009 Absolute Maximum Ratings Tj = 25_C Parameter Test Conditions Type Symbol Value Unit Reverse voltage VR 35 V Forward current IF 100 mA Junction temperature Tj 150 °C Storage temperature range Tstg –55...+150 °C Maximum Thermal Resistance Tj = 25_C Parameter Test Conditions Symbol Value Unit Junction ambient on PC board 50mmx50mmx1.6mm RthJA 500 K/W Electrical Characteristics Tj = 25_C Parameter Test Conditions Type Symbol Min Typ Max Unit Forward voltage IF=100mA VF 1 V Reverse current VR=20V IR 50 nA Diode capacitance f=100MHz, VR=1V CD 1.5 pF f=100MHz, VR=3V BA982 CD 1.25 pF R BA983 CD 1.2 pF Differential forward f=200MHz, IF=3mA BA982 rf 0.7 W resistance F BA983 rf 1.2 W f=200MHz, IF=10mA BA982 rf 0.5 W F BA983 rf 0.9 W |
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