BAQ333 datasheet(2/4 Pages) VISHAY

2 / 4 page

BAQ333, BAQ334, BAQ335

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Vishay Semiconductors

Rev. 2.1, 01-Aug-12

Document Number: 85538

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TYPICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)

Fig. 1 - Reverse Current vs. Junction Temperature

Fig. 2 - Forward Current vs. Forward Voltage

Fig. 3 - Board for RthJA Definition (in mm)

ELECTRICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)

PARAMETER

TEST CONDITION

PART

SYMBOL

MIN.

TYP.

MAX.

UNIT

Forward voltage

IF = 100 mA

Reverse current

 300 lx, rated V

R, Tj = 125 °C

0.5

μA

 300 lx, V

R = 15 V

BAQ333

0.5

 300 lx, V

R = 30 V

BAQ334

0.5

 300 lx, V

R = 60 V

BAQ335

0.5

Breakdown voltage

IR = 5 μA, tp/T = 0.01,

tp = 0.3 ms

BAQ333

V(BR)

BAQ334

V(BR)

BAQ335

V(BR)

140

Diode capacitance

VR = 0 V, f = 1 MHz

3pF

04080

120

160

100

1000

10 000

Tj - Junction Temperature (°C)

200

94 9079

Scattering Limit

VR =VRRM

0.4

0.8

1.2

1.6

0.1

100

1000

VF - Forward Voltage (V)

2.0

94 9078

Scattering Limit

Tj =25 °C

2.5

0.71

1.3

1.27

0.152

0.355

95 10329

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