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BAS16 Datasheet(PDF) 1 Page - Vishay Siliconix |
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BAS16 Datasheet(HTML) 1 Page - Vishay Siliconix |
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1 / 4 page ![]() BAS16 Vishay Telefunken Rev. 1, 01-Apr-99 1 (4) www.vishay.de • FaxBack +1-408-970-5600 Document Number 85539 Silicon Epitaxial Planar Diode Features D Ultra fast switching speed D Surface mount package ideally suited for automatic insertion D High conductance 94 8550 Absolute Maximum Ratings Tj = 25_C Parameter Test Conditions Symbol Value Unit Non repetitive peak reverse voltage VRM 100 V Repetitive peak reverse voltage =Working peak reverse voltage =DC Blocking voltage VRRM =VRWM =VR 75 V Peak forward surge current tp=1s IFSM 1 A g tp=1ms IFSM 2 A Average forward current half wave rectification with resistive load and f ≥ 50 MHz, on ceramic substrate 8mmx10mmx0.7mm IFAV 150 mA Forward current on ceramic substrate 8mmx10mmx0.7mm IF 300 mA Power dissipation on ceramic substrate 8mmx10mmx0.7mm Ptot 350 mW Junction and storage temperature range Tj=Tstg –55...+150 °C Maximum Thermal Resistance Tj = 25_C Parameter Test Conditions Symbol Value Unit Junction ambient on ceramic substrate 8mmx10mmx0.7mm RthJA 357 K/W |
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