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BAS281 Datasheet(PDF) 2 Page - Vishay Siliconix |
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BAS281 Datasheet(HTML) 2 Page - Vishay Siliconix |
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2 / 4 page ![]() www.vishay.com 2 Document Number 85500 Rev. 1.6, 03-Mar-04 VISHAY BAS281 / 282 / 283 Vishay Semiconductors Thermal Characteristics Tamb = 25 °C, unless otherwise specified Electrical Characteristics Tamb = 25 °C, unless otherwise specified Typical Characteristics (Tamb = 25 °C unless otherwise specified) Parameter Test condition Symbol Value Unit Junction ambient on PC board 50 mm x 50 mm x 1.6 mm RthJA 320 K/W Junction temperature Tj 125 °C Storage temperature range Tstg - 65 to + 150 °C Parameter Test condition Symbol Min Typ. Max Unit Forward voltage IF = 0.1 mA VF 330 mV IF = 1 mA VF 410 mV IF = 15 mA VF 1V Reverse current VR = VRmax IR 200 nA Diode capacitance VR = 1 V, f = 1 MHz CD 1.6 pF Fig. 1 Max. Reverse Power Dissipation vs. Junction Temperature 0 2 4 6 8 10 12 14 25 50 75 100 125 150 Tj - Junction Temperature ( ° C) 15794 VR =60V R = 540 K/W thJA PR VR - Limit @ 100 % PR VR - Limit @ 80 % Fig. 2 Reverse Current vs. Junction Temperature 0.1 100 1000 25 50 75 100 125 150 1 10 15795 VR =VRRM Tj - Junction Temperature ( ° C) |
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