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BAS85 Datasheet(PDF) 1 Page - Vishay Siliconix |
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BAS85 Datasheet(HTML) 1 Page - Vishay Siliconix |
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1 / 4 page ![]() BAS85 Vishay Telefunken Rev. 3, 01-Apr-99 1 (4) www.vishay.de • FaxBack +1-408-970-5600 Document Number 85510 Schottky Barrier Diode Features D Integrated protection ring against static discharge D Very low forward voltage Applications Applications where a very low forward voltage is required 94 9371 Absolute Maximum Ratings Tj = 25_C Parameter Test Conditions Type Symbol Value Unit Reverse voltage VR 30 V Peak forward surge current tp=10 ms IFSM 5 A Repetitive peak forward current tp≤1s IFRM 300 mA Forward current IF 200 mA Average forward current VRWM=25V IFAV 200 mA Junction temperature Tj 125 °C Storage temperature range Tstg –65...+150 °C Maximum Thermal Resistance Tj = 25_C Parameter Test Conditions Symbol Value Unit Junction ambient on PC board 50mmx50mmx1.6mm RthJA 320 K/W Electrical Characteristics Tj = 25_C Parameter Test Conditions Type Symbol Min Typ Max Unit Forward voltage IF=0.1mA VF 240 mV g IF=1mA VF 320 mV IF=10mA VF 400 mV IF=30mA VF 500 mV IF=100mA VF 800 mV Reverse current VR=25V, tp=300ms IR 2.3 mA Diode capacitance VR=1V, f=1MHz CD 10 pF |
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