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2SC4102 Datasheet(PDF) 1 Page - Guangdong Kexin Industrial Co.,Ltd |
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2SC4102 Datasheet(HTML) 1 Page - Guangdong Kexin Industrial Co.,Ltd |
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1 / 1 page  SMD Type Transistors 1 www.kexin.com.cn 1 Emitter 2 Base 3 Collector High-voltage Amplifier Transistor 2SC4102 Features High breakdown voltage.(VCEO =120V) Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector-base voltage VCBO 120 V Collector-emitter voltage VCEO 120 V Emitter-base voltage VEBO 5V Collector current IC 50 mA Collector power dissipation PC 0.2 W Junction temperature Tj 150 Storage temperature Tstg -55 to +150 Electrical Characteristics Ta = 25 Parameter Symbol Testconditons Min Typ Max Unit Collector-base breakdown voltage VCBO IC=50ìA 120 V Collector-emitter breakdown voltage VCEO IC=1mA 120 V Emitter-base breakdown voltage VEBO IE=50ìA 5 V Collector cutoff current ICBO VCB=100V 0.5 A Emitter cutoff current IEBO VEB=4V 0.5 A DC current transfer ratio hFE VCE=6V, IC=2mA 180 560 Collector-emitter saturation voltage VCE(sat) IC=10mA, IB=1mA 0.5 V Output capacitance Cob VCB=12V, IE=0A, f=1MHz 2.5 pF Transition frequency fT VCE=-12V, IE= 2mA, f=100MHz 140 MHz hFE Classification Marking TR TS Rank R S hFE 180 390 270 560 |
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