2SC1623 datasheet(1/4 Pages) KEXIN

Part #	2SC1623

Description	NPN Silicon Transistor

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Manufacturer	KEXIN [Guangdong Kexin Industrial Co.,Ltd]

Direct Link	http://www.kexin.com.cn/index.asp

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SMD Type

Transistors

www.kesenes.com

1

0.4+0.1

-0.1

2.9+0.1

-0.1

0.95+0.1

-0.1

1.9+0.1

-0.1

1.Base

2.Emitter

3.collector

12

3

Unit: mm

SOT-23

0.1+0.05

-0.01

Features

High DC Current Gain:

hFE = 200 TYP.

VCE =6.0 V, IC =1.0 mA

High Voltage:

VCE O =50V

hFE Classification

Marking

L4L5L6L7

hFE

90to180

135to270

200to400

300to600

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NPN Silicon Transistor

2SC1623

Absolute Maximum Ratings Ta = 25

Parameter

Symbol

Rating

Unit

Collector to base voltage

VCBO

60

V

Collector to emitter voltage

VCEO

50

V

Emitter to base voltage

VEBO

5V

Collector current (DC)

IC

100

mA

Collector power dissipation

PC

200

mW

Junction temperature

Tj

150

Storage temperature range

Tstg

-55to+150

Electrical Characteristics Ta = 25

Parameter

Symbol

Testconditons

Min

Typ

Max

Unit

Collector cutoff current

ICBO

VCB = 60V, IE=0

0.1

A

Emitter cutoff current

IEBO

VEB =5V, IC=0

0.1

A

DC current gain *

hFE

VCE =6V,IC = 1mA

90

200

600

Collector-emitter saturation voltage *

VCE(sat) IC = 100mA , IB = 10mA

0.15

0.3

V

Base-emitter saturation voltage *

VBE(sat) IC = 100mA , IB =10mA

0.86

1

V

Base-emitter voltage *

VBE

VCE =6V,IC = 1mA

0.55

0.62

0.65

V

Output capacitance

Cob

VCB =6V,IE = 0 , f = 1.0MHz

3.0

pF

Transiton Frequency

fT

VCE =6V,IE = -10mA

250

MHz

*. PW

350ìs,duty cycle

2%

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2SC1623 Datasheet(PDF) 1 Page - Guangdong Kexin Industrial Co.,Ltd

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