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BAV102 Datasheet(PDF) 1 Page - Vishay Siliconix |
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BAV102 Datasheet(HTML) 1 Page - Vishay Siliconix |
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1 / 4 page  BAV100...BAV103 Vishay Telefunken Rev. 2, 01-Apr-99 1 (4) www.vishay.de • FaxBack +1-408-970-5600 Document Number 85542 Silicon Epitaxial Planar Diodes Applications General purposes 94 9371 Absolute Maximum Ratings Tj = 25_C Parameter Test Conditions Type Symbol Value Unit Repetitive peak reverse voltage BAV100 VRRM 60 V g BAV101 VRRM 120 V BAV102 VRRM 200 V BAV103 VRRM 250 V Reverse voltage BAV100 VR 50 V g BAV101 VR 100 V BAV102 VR 150 V BAV103 VR 200 V Peak forward surge current tp=1s IFSM 1 A Repetitive peak forward current IFRM 625 mA Forward current IF 250 mA Power dissipation PV 500 mW Junction temperature Tj 175 °C Storage temperature range Tstg –65...+175 °C Maximum Thermal Resistance Tj = 25_C Parameter Test Conditions Symbol Value Unit Junction lead RthJL 350 K/W Junction ambient on PC board 50mmx50mmx1.6mm RthJA 500 K/W |
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