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BAW76 Datasheet(PDF) 1 Page - Vishay Siliconix |
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BAW76 Datasheet(HTML) 1 Page - Vishay Siliconix |
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1 / 3 page  BAW76 Vishay Telefunken Rev. 2, 01-Apr-99 1 (3) www.vishay.de • FaxBack +1-408-970-5600 Document Number 85551 Silicon Epitaxial Planar Diode Applications Extreme fast switches 94 9367 Absolute Maximum Ratings Tj = 25_C Parameter Test Conditions Type Symbol Value Unit Repetitive peak reverse voltage VRRM 75 V Reverse voltage VR 50 V Peak forward surge current tp=1ms IFSM 2000 mA Repetitive peak forward current IFRM 450 mA Forward current IF 300 mA Average forward current VR=0 IFAV 150 mA Power dissipation l=4mm, TL=45°C PV 440 mW l=4mm, TLx25°C PV 500 mW Junction temperature Tj 200 °C Storage temperature range Tstg –65...+200 °C Maximum Thermal Resistance Tj = 25_C Parameter Test Conditions Symbol Value Unit Junction ambient l=4mm, TL=constant RthJA 350 K/W |
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