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2SJ599 Datasheet(PDF) 2 Page - Guangdong Kexin Industrial Co.,Ltd

Part # 2SJ599
Description  MOS Field Effect Transistor
PDF  2 Pages
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Manufacturer  KEXIN [Guangdong Kexin Industrial Co.,Ltd]
Direct Link  http://www.kexin.com.cn/index.asp
Logo KEXIN - Guangdong Kexin Industrial Co.,Ltd

2SJ599 Datasheet(HTML) 2 Page - Guangdong Kexin Industrial Co.,Ltd

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2
SMD Type
IC
SMD Type
MOSFET
Electrical Characteristics Ta = 25
Parameter
Symbol
Testconditons
Min
Typ
Max
Unit
Drain cut-off current
IDSS
VDS=-60V,VGS=0
-10
A
Gate leakage current
IGSS
VGS=
20V,VDS=0
10
A
Gate to source cutoff voltage
VGS(off)
VDS=-10V,ID=-1mA
1.5
2.0
2.5
V
Forward transfer admittance
Yfs
VDS=-10V,ID=-10A
8
16
S
VGS=-10V,ID=-10A
60
75
m
VGS=-4.0V,ID=-10A
78
111
m
Input capacitance
Ciss
720
pF
Output capacitance
Coss
150
pF
Reverse transfer capacitance
Crss
50
pF
Turn-on delay time
td(on)
8ns
Rise time
tr
9ns
Turn-off delay time
td(off)
52
ns
Fall time
tf
16
ns
Total Gate Charge
QG
ID = -20A
26
nC
Gate to Source Charge
QGS
VDD= -48 V
5
nC
Gate to Drain Charge
QGD
VGS =-10 V
7
nC
Body Diode Forward Voltage
VF(S-D)
IF = -20A, VGS =0V
1.0
V
Reverse Recovery Time
trr
IF =-20 A, VGS =0V
51
ns
Reverse Recovery Charge
Qrr
di/dt = 100 A /
s
102
nC
Drain to source on-state resistance
RDS(on)
VDS=-10V,VGS=0,f=1MHZ
VGS(on)=-10V,ID=--10A ,VDD=-30V,RG=0
2SJ599



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