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2SJ599 Datasheet(PDF) 2 Page - Guangdong Kexin Industrial Co.,Ltd |
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2SJ599 Datasheet(HTML) 2 Page - Guangdong Kexin Industrial Co.,Ltd |
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2 / 2 page ![]() www.kexin.com.cn 2 SMD Type IC SMD Type MOSFET Electrical Characteristics Ta = 25 Parameter Symbol Testconditons Min Typ Max Unit Drain cut-off current IDSS VDS=-60V,VGS=0 -10 A Gate leakage current IGSS VGS= 20V,VDS=0 10 A Gate to source cutoff voltage VGS(off) VDS=-10V,ID=-1mA 1.5 2.0 2.5 V Forward transfer admittance Yfs VDS=-10V,ID=-10A 8 16 S VGS=-10V,ID=-10A 60 75 m VGS=-4.0V,ID=-10A 78 111 m Input capacitance Ciss 720 pF Output capacitance Coss 150 pF Reverse transfer capacitance Crss 50 pF Turn-on delay time td(on) 8ns Rise time tr 9ns Turn-off delay time td(off) 52 ns Fall time tf 16 ns Total Gate Charge QG ID = -20A 26 nC Gate to Source Charge QGS VDD= -48 V 5 nC Gate to Drain Charge QGD VGS =-10 V 7 nC Body Diode Forward Voltage VF(S-D) IF = -20A, VGS =0V 1.0 V Reverse Recovery Time trr IF =-20 A, VGS =0V 51 ns Reverse Recovery Charge Qrr di/dt = 100 A / s 102 nC Drain to source on-state resistance RDS(on) VDS=-10V,VGS=0,f=1MHZ VGS(on)=-10V,ID=--10A ,VDD=-30V,RG=0 2SJ599 |
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