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2SA1063 Datasheet(PDF) 2 Page - Inchange Semiconductor Company Limited |
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2SA1063 Datasheet(HTML) 2 Page - Inchange Semiconductor Company Limited |
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2 / 3 page ![]() Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2SA1063 CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)CEO Collector-emitter breakdown voltage IC=-25mA ;IB=0 -150 V VCEsat Collector-emitter saturation voltage IC=-4A ;IB=-0.4A B -2.0 V VBE Base-emitter on voltage IC=-4A;VCE=-5V -1.8 V ICBO Collector cut-off current VCB=-150V; IE=0 -50 μA IEBO Emitter cut-off current VEB=-3V; IC=0 -50 μA hFE-1 DC current gain IC=-1A ; VCE=-5V 40 280 hFE-2 DC current gain IC=-4A ; VCE=-5V 20 fT Transition frequency IC=-0.5A ; VCE=-5V 50 MHz hFE-1 Classifications R Q P O 40-80 60-120 90-180 140-280 2 |
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