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2SA1195 Datasheet(PDF) 1 Page - Inchange Semiconductor Company Limited |
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2SA1195 Datasheet(HTML) 1 Page - Inchange Semiconductor Company Limited |
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1 / 3 page  Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2SA1195 DESCRIPTION ·With TO-202 package Fig.1 simplified outline (TO-202) and symbol ·High power dissipation ·Complement to type 2SC2483 APPLICATIONS ·For high voltage and general purpose amplification PINNING(see Fig.2) PIN DESCRIPTION 1 Base 2 Collector 3 Emitter Absolute maximum ratings (Ta=25℃) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter -160 V VCEO Collector-emitter voltage Open base -160 V VEBO Emitter-base voltage Open collector -6 V IC Collector current -1.5 A IB B Base current -0.5 A Ta=25℃ 2 PC Collector power dissipation TC=25℃ 15 W Tj Junction temperature 175 ℃ Tstg Storage temperature -55~150 ℃ |
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