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BDY90A Datasheet(PDF) 1 Page - Inchange Semiconductor Company Limited

Part # BDY90A
Description  isc Silicon NPN Power Transistor
PDF  2 Pages
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Manufacturer  ISC [Inchange Semiconductor Company Limited]
Direct Link  http://www.iscsemi.cn
Logo ISC - Inchange Semiconductor Company Limited

BDY90A Datasheet(HTML) 1 Page - Inchange Semiconductor Company Limited

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INCHANGE Semiconductor
isc Product Specification
isc Silicon NPN Power Transistor
BDY90A
DESCRIPTION
·High Current Capability
·Collector-Emitter Sustaining Voltage-
: VCEO(SUS)= 100V(Min)
·High Switching Speed
APPLICATIONS
·Designed for use in converters, inverters, switching
regulators and switching control amplifiers.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
120
V
VCEX
Collector-Emitter Voltage(VEB= 0)
120
V
VCEO
Collector-Emitter Voltage
100
V
VEBO
Emitter-Base Voltage
6
V
IC
Collector Current-Continuous
12
A
ICM
Collector Current-Peak
15
A
IB
B
Base Current-Continuous
2
A
IBM
Base Current-Peak
3
A
IE
Emitter Current-Continuous
-15
A
IEM
Emitter Current-Peak
-15
A
PC
Collector Power Dissipation@TC=25℃
40
W
TJ
Junction Temperature
150
℃
Tstg
Storage Temperature
-65~150
℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX
UNIT
Rth j-c
Thermal Resistance,Junction to Case
2.0
℃/W
isc Website：www.iscsemi.cn


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