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MJ410 Datasheet(PDF) 1 Page - Inchange Semiconductor Company Limited

Part # MJ410
Description  isc Silicon NPN Power Transistor
PDF  2 Pages
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Manufacturer  ISC [Inchange Semiconductor Company Limited]
Direct Link  http://www.iscsemi.cn
Logo ISC - Inchange Semiconductor Company Limited

MJ410 Datasheet(HTML) 1 Page - Inchange Semiconductor Company Limited

  MJ410 Datasheet HTML 1Page - Inchange Semiconductor Company Limited MJ410 Datasheet HTML 2Page - Inchange Semiconductor Company Limited  
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INCHANGE Semiconductor
isc Product Specification
isc Silicon NPN Power Transistor
MJ410
DESCRIPTION
·High Collector-Emitter Sustaining Voltage-
: VCEO(SUS)= 200V(Min.)
·Low Collector Saturation Voltage-
: VCE(sat)= 0.8V(Max)@ IC= 1A
APPLICATIONS
·Designed for medium to high voltage inverters, converters,
regulators and switching circuits.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
200
V
VCEO
Collector-Emitter Voltage
200
V
VEBO
Emitter-Base Voltage
5
V
IC
Collector Current-Continuous
5
A
ICM
Collector Current-Peak
10
A
IB
B
Base Current-Continuous
2
A
PC
Collector Power Dissipation@TC=25℃
100
W
TJ
Junction Temperature
150
℃
Tstg
Storage Temperature Range
-65~200
℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX
UNIT
Rth j-c
Thermal Resistance,Junction to Case
0.75
℃/W
isc Website：www.iscsemi.cn


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