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BU426 Datasheet(PDF) 1 Page - Inchange Semiconductor Company Limited

Part # BU426
Description  isc Silicon NPN Power Transistor
PDF  2 Pages
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Manufacturer  ISC [Inchange Semiconductor Company Limited]
Direct Link  http://www.iscsemi.cn
Logo ISC - Inchange Semiconductor Company Limited

BU426 Datasheet(HTML) 1 Page - Inchange Semiconductor Company Limited

  BU426 Datasheet HTML 1Page - Inchange Semiconductor Company Limited BU426 Datasheet HTML 2Page - Inchange Semiconductor Company Limited  
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INCHANGE Semiconductor
isc Product Specification
isc Silicon NPN Power Transistor
BU426
DESCRIPTION
·Collector-Emitter Sustaining Voltage-
: VCEO(SUS) = 375V(Min)
·High Switching Speed
APPLICATIONS
·Designed for switch-mode CTV supply systems applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
800
V
VCES
Collector-Emitter Voltage VBE= 0
800
V
VCEO
Collector-Emitter Voltage
375
V
VEBO
Emitter-Base Voltage
10
V
IC
Collector Current-Continuous
6
A
ICM
Collector Current-Peak
10
A
IB
B
Base Current-Continuous
2
A
IBM
Base Current-Peak
3
A
PC
Collector Power Dissipation
@ TC=25℃
70
W
TJ
Junction Temperature
150
℃
Tstg
Storage Temperature Range
-65~150
℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX
UNIT
Rth j-c
Thermal Resistance, Junction to Case
1.1
℃/W
isc Website：www.iscsemi.cn


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