BU426A datasheet(2/2 Pages) ISC

Part #	BU426A

Description	isc Silicon NPN Power Transistor

PDF	2 Pages

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Manufacturer	ISC [Inchange Semiconductor Company Limited]

Direct Link	http://www.iscsemi.cn

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INCHANGE Semiconductor

isc Product Specification

isc Silicon NPN Power Transistor

BU426A

ELECTRICAL CHARACTERISTICS

TC=25℃ unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

MIN

TYP.

MAX

UNIT

VCEO(SUS)

Collector-Emitter Sustaining Voltage

IC= 0.1A ;IB= 0; L= 25mH

400

VCE(sat)-1

Collector-Emitter Saturation Voltage

IC= 2.5A; IB= 0.5A

1.5

VCE(sat)-2

Collector-Emitter Saturation Voltage

IC= 4A; IB= 1.25A

3.0

VBE(sat)-1

Base-Emitter Saturation Voltage

IC= 2.5A; IB= 0.5A

1.4

VBE(sat)-2

Base-Emitter Saturation Voltage

IC= 4A; IB= 1.25A

1.6

ICES

Collector Cutoff Current

VCE= 900V; VBE= 0

VCE= 900V; VBE= 0;TJ=125℃

1.0

2.0

IEBO

Emitter Cutoff Current

VEB= 10V; IC=0

hFE

DC Current Gain

IC= 0.6A ; VCE= 5V

Switching Times

ton

Turn-On Time

0.6

μs

tstg

Storage Time

3.5

μs

Fall Time

IC= 2.5A; IB1= 0.5A; IB2= -1A;

VCC= 250V

0.15

μs

isc Website：www.iscsemi.cn

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