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BDT84 Datasheet(PDF) 2 Page - Inchange Semiconductor Company Limited |
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BDT84 Datasheet(HTML) 2 Page - Inchange Semiconductor Company Limited |
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2 / 2 page ![]() INCHANGE Semiconductor isc Product Specification isc Silicon PNP Power Transistors BDT82/84/86/88 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT BDT82 -60 BDT84 -80 BDT86 -100 VCEO(SUS) Collector-Emitter Sustaining Voltage BDT88 IC= -30mA; IB= 0 -120 V VCE(sat)-1 Collector-Emitter Saturation Voltage IC= -5A; IB= -0.5A B -1.0 V VCE(sat)-2 Collector-Emitter Saturation Voltage IC= -7A; IB= -0.7A B -1.6 V VBE(on) Base-Emitter On Voltage IC= -5A ; VCE= -4V -1.5 V ICES Collector Cutoff Current VCE= 0.8VCBOmax; VBE= 0 -1 mA ICBO Collector Cutoff Current VCB= VCBOmax; IE= 0 -0.2 mA IEBO Emitter Cutoff Current VEB= -7V; IC= 0 -0.1 mA hFE-1 DC Current Gain IC= -50mA ; VCE= -10V 40 hFE-2 DC Current Gain IC= -5A ; VCE= -4V 40 fT Current-Gain—Bandwidth Product IC= -0.5A ; VCE= -10V 20 MHz Switching Times ton Turn-On Time 1 μs toff Turn-Off Time IC= -7A; IB1= -IB2= -0.7A 2 μs isc Website:www.iscsemi.cn |
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