MJ11022 datasheet(1/2 Pages) ISC

Part #	MJ11022

Description	isc Silicon NPN Darlington Power Transistor

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Manufacturer	ISC [Inchange Semiconductor Company Limited]

Direct Link	http://www.iscsemi.cn

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INCHANGE Semiconductor

isc Product Specification

isc Silicon NPN Darlington Power Transistor

MJ11022

DESCRIPTION

·Collector-Emitter Sustaining Voltage-

: VCEO(SUS)= 250V (Min.)

·High DC Current Gain-

: hFE= 400(Min.)@IC= 10A

·Low Collector Saturation Voltage-

: VCE (sat)= 1.0V(Max.)@ IC= 5.0A

APPLICATIONS

·Designed for general purpose amplifiers, low frequency

switching and motor control applications.

ABSOLUTE MAXIMUM RATINGS (Ta=25℃)

SYMBOL

PARAMETER

VALUE

UNIT

VCBO

Collector-Base Voltage

250

V

VCEO

Collector-Emitter Voltage

250

V

VEBO

Emitter-Base Voltage

5

V

IC

Collector Current-Continunous

15

A

ICM

Collector Current-Peak

30

A

IB

B

Base Current-Continunous

0.5

A

PC

Collector Power Dissipation

@TC=25℃

175

W

Tj

Junction Temperature

175

℃

Tstg

Storage Temperature Range

-65~200

℃

THERMAL CHARACTERISTICS

SYMBOL

PARAMETER

MAX

UNIT

Rth j-c

Thermal Resistance, Junction to Case

0.86

℃/W

isc Website：www.iscsemi.cn

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