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BUX67B Datasheet(PDF) 1 Page - Inchange Semiconductor Company Limited

Part # BUX67B
Description  isc Silicon NPN Power Transistors
PDF  2 Pages
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Manufacturer  ISC [Inchange Semiconductor Company Limited]
Direct Link  http://www.iscsemi.cn
Logo ISC - Inchange Semiconductor Company Limited

BUX67B Datasheet(HTML) 1 Page - Inchange Semiconductor Company Limited

  BUX67B Datasheet HTML 1Page - Inchange Semiconductor Company Limited BUX67B Datasheet HTML 2Page - Inchange Semiconductor Company Limited  
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INCHANGE Semiconductor
isc Product Specification
isc Silicon NPN Power Transistors
BUX67/A/B/C
DESCRIPTION
·Contunuous Collector Current-IC= 2A
·Power Dissipation-PD=35W @TC= 25℃
·Collector-Emitter Saturation Voltage-
: VCE(sat)= 2.5V(Max)@ IC = 1A
APPLICATIONS
·Designed for high-speed switching and linear amplifier appli-
cation for high-voltage operational amplifiers, switching regu-
lators, converters,deflection stages and high fidelity amplifiers.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
BUX67
200
BUX67A
300
BUX67B
350
VCBO
Collector-Base Voltage
BUX67C
400
V
BUX67
150
BUX67A
250
BUX67B
300
VCEO
Collector-Emitter Voltage
BUX67C
350
V
VEBO
Emitter-Base Voltage
6
V
IC
Collector Current-Continuous
2.0
A
ICP
Collector Current-Peak
5.0
A
IB
B
Base Current
1.0
A
PC
Collector Power Dissipation@TC=25℃
35
W
TJ
Junction Temperature
200
℃
Tstg
Storage Temperature
-65~200
℃
isc Website：www.iscsemi.cn


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