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2SA1659 Datasheet(PDF) 1 Page - Inchange Semiconductor Company Limited |
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2SA1659 Datasheet(HTML) 1 Page - Inchange Semiconductor Company Limited |
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1 / 3 page ![]() INCHANGE Semiconductor isc Product Specification isc Silicon PNP Power Transistor 2SA1659 DESCRIPTION ·High Collector-Emitter Breakdown Voltage VCEO= -160V(Min) ·Complement to Type 2SC4370 ·Full-mold package that does not require an insulating board or bushing when mounting. APPLICATIONS ·Designed for high voltage applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -160 V VCEO Collector-Emitter Voltage -160 V VEBO Emitter-Base Voltage -5.0 V IC(DC) Collector Current(DC) -1.5 A IB(DC) Base Current -0.15 A PC Collector Power Dissipation @TC=25℃ 20 W TJ Junction Temperature 150 ℃ Tstg Storage Temperature -55~150 ℃ isc Website:www.iscsemi.cn |
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