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BUX82 Datasheet(PDF) 1 Page - Inchange Semiconductor Company Limited

Part # BUX82
Description  isc Silicon NPN Power Transistors
PDF  2 Pages
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Manufacturer  ISC [Inchange Semiconductor Company Limited]
Direct Link  http://www.iscsemi.cn
Logo ISC - Inchange Semiconductor Company Limited

BUX82 Datasheet(HTML) 1 Page - Inchange Semiconductor Company Limited

  BUX82 Datasheet HTML 1Page - Inchange Semiconductor Company Limited BUX82 Datasheet HTML 2Page - Inchange Semiconductor Company Limited  
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INCHANGE Semiconductor
isc Product Specification
isc Silicon NPN Power Transistors
BUX82/83
DESCRIPTION
·Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 400V(Min)-BUX82
= 450V(Min)-BUX83
·High Switching Speed
APPLICATIONS
·Designed for use as high-speed power switch at high
voltage.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
BUX82
800
VCES
Collector-Emitter Voltage
BUX83
1000
V
BUX82
400
VCEO
Collector-Emitter Voltage
BUX83
450
V
BUX82
500
VCER
Collector-Emitter Voltage
RBE= 50Ω
BUX83
500
V
VEBO
Emitter-Base Voltage
10
V
IC
Collector Current-Continuous
6
A
ICM
Collector Current-Peak
8
A
IB
B
Base Current-Continuous
2
A
IBM
Base Current-Peak
3
A
PC
Collector Power Dissipation @TC=25℃
75
W
TJ
Junction Temperature
150
℃
Tstg
Storage Temperature
-65~150
℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX
UNIT
Rth j-c
Thermal Resistance,Junction to Case
1.65
℃/W
isc Website：www.iscsemi.cn


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