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CNY65EXI Datasheet(PDF) 2 Page - Vishay Siliconix |
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CNY65EXI Datasheet(HTML) 2 Page - Vishay Siliconix |
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2 / 7 page ![]() CNY65Exi Vishay Telefunken Rev. A3, 11–Jan–99 127 Absolute Maximum Ratings Input (Emitter) Parameter Test Conditions Symbol Value Unit Reverse voltage VR 5 V Forward Current IF 75 mA Forward surge current tp ≤ 10 ms IFSM 1.5 A Power dissipation Tamb ≤ 25°C PV 120 mW Junction temperature Tj 100 °C Output (Detector) Parameter Test Conditions Symbol Value Unit Collector emitter voltage VCEO 32 V Emitter collector voltage VECO 7 V Collector current IC 50 mA Collector peak current tp/T = 0.5, tp ≤ 10 ms ICM 100 mA Power dissipation Tamb ≤ 25°C PV 130 mW Junction temperature Tj 100 °C Coupler Parameter Test Conditions Symbol Value Unit DC isolation test voltage t = 1 min VIO 11.6 kV Total power dissipation Tamb ≤ 25°C Ptot 250 mW Ambient temperature range Tamb –55 to +85 °C Storage temperature range Tstg –55 to +100 °C Soldering temperature 2 mm from case, t ≤ 10 s Tsd 260 °C |
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