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MJE2801T Datasheet(PDF) 1 Page - Inchange Semiconductor Company Limited

Part # MJE2801T
Description  isc Silicon NPN Power Transistor
PDF  2 Pages
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Manufacturer  ISC [Inchange Semiconductor Company Limited]
Direct Link  http://www.iscsemi.cn
Logo ISC - Inchange Semiconductor Company Limited

MJE2801T Datasheet(HTML) 1 Page - Inchange Semiconductor Company Limited

  MJE2801T Datasheet HTML 1Page - Inchange Semiconductor Company Limited MJE2801T Datasheet HTML 2Page - Inchange Semiconductor Company Limited  
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INCHANGE Semiconductor
isc Product Specification
isc Silicon NPN Power Transistor
MJE2801T
DESCRIPTION
·Collector-Emitter Breakdown Voltage-
: V(BR)CEO = 60V(Min)
·High DC Current Gain-
: hFE= 25-100@IC= 3A
·Complement to Type MJE2901T
APPLICATIONS
·Designed for use as an output device in complementary
audio amplifiers up to 35 watts music power per channel.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
60
V
VCEO
Collector-Emitter Voltage
60
V
VEBO
Emitter-Base Voltage
4
V
IC
Collector Current-Continuous
10
A
IB
B
Base Current-Continuous
5
A
PC
Collector Power Dissipation
@ TC=25℃
75
W
TJ
Junction Temperature
150
℃
Tstg
Storage Temperature Range
-55~150
℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX
UNIT
Rth j-c
Thermal Resistance,Junction to Case
1.67
℃/W
isc Website：www.iscsemi.cn


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