IRF630N datasheet(1/2 Pages) ISC

Part #	IRF630N

Description	isc N-Channel MOSFET Transistor

PDF	2 Pages

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Manufacturer	ISC [Inchange Semiconductor Company Limited]

Direct Link	http://www.iscsemi.cn

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INCHANGE Semiconductor

isc Product Specification

isc N-Channel MOSFET Transistor

IRF630N

DESCRIPTION

·Drain Current –ID=9.3A@ TC=25℃

·Drain Source Voltage-

: VDSS= 200V(Min)

·Static Drain-Source On-Resistance

: RDS(on) = 0.3Ω(Max)

·Fast Switching Speed

·Low Drive Requirement

APPLICATIONS

·This device is n-channel, enhancement mode, power MOSFET

designed especially for high power,

high speed applications,

such as switching power supplies,UPS, AC and DC motor con-

trols, relay and solenoid drivers and high energy pulse circuits.

ABSOLUTE MAXIMUM RATINGS(Ta=25℃)

SYMBOL

ARAMETER

VALUE

UNIT

VDSS

Drain-Source Voltage (VGS=0)

200

V

VGS

Gate-Source Voltage

±20

V

ID

Drain Current-continuous@ TC=25℃

9.3

A

PD

Total Dissipation@TC=25℃

82

W

Tj

Max. Operating Junction Temperature

175

℃

Tstg

Storage Temperature Range

-55~175

℃

THERMAL CHARACTERISTICS

SYMBOL

PARAMETER

MAX

UNIT

Rth j-c

Thermal Resistance,Junction to Case

1.83

℃/W

Rth j-a

Thermal Resistance,Junction to Ambient

62

℃/W

isc Website：www.iscsemi.cn

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IRF630N Datasheet(PDF) 1 Page - Inchange Semiconductor Company Limited

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