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MJ11013 Datasheet(PDF) 2 Page - Inchange Semiconductor Company Limited

Part # MJ11013
Description  isc Silicon PNP Darlington Power Transistor
PDF  2 Pages
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Manufacturer  ISC [Inchange Semiconductor Company Limited]
Direct Link  http://www.iscsemi.cn
Logo ISC - Inchange Semiconductor Company Limited

MJ11013 Datasheet(HTML) 2 Page - Inchange Semiconductor Company Limited

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INCHANGE Semiconductor
isc Product Specification
isc Website：www.iscsemi.cn
isc Silicon PNP Darlington Power Transistor
MJ11013
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN
TYP.
MAX
UNIT
V(BR)CEO
Collector-Emitter Breakdown Voltage
IC= -0.1A; IB= 0
-90
V
VCE(sat)-1
Collector-Emitter Saturation Voltage
IC= -20A; IB= -0.2A
-3.0
V
V CE(sat)-2
Collector-Emitter Saturation Voltage
IC= -30A; IB= -0.3A
-4.0
V
VBE(sat)-1
Base-Emitter Saturation Voltage
IC= -20A; IB= -0.2A
-3.5
V
VBE(sat)-2
Base-Emitter Saturation Voltage
IC= -30A; IB= -0.3A
-5.0
V
ICER
Collector Cutoff Current
VCE=-90V; RBE=1kΩ
VCE=-90V; RBE=1kΩ; TC=150℃
-1.0
-5.0
mA
ICEO
Collector Cutoff Current
VCE= -50V; IB= 0
-1.0
mA
IEBO
Emitter Cutoff Current
VEB= -5V; IC= 0
-5.0
mA
hFE-1
DC Current Gain
IC= -20A, VCE= -5V
1000
hFE-2
DC Current Gain
IC= -30A, VCE= -5V
200



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