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2SA1120 Datasheet(PDF) 2 Page - Inchange Semiconductor Company Limited |
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2SA1120 Datasheet(HTML) 2 Page - Inchange Semiconductor Company Limited |
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2 / 3 page ![]() Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2SA1120 CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)CEO Collector-emitter breakdown voltage IC=-10mA ;IB=0 -35 V VCEsat Collector-emitter saturation voltage IC=-4A; IB=-0.1A -1.0 V VBE Base-emitter on voltage IC=-4A ; VCE=-2V -1.5 V ICBO Collector cut-off current VCB=-35V; IE=0 -0.1 mA IEBO Emitter cut-off current VEB=-6V; IC=0 -0.1 mA hFE-1 DC current gain IC=-500mA ; VCE=-2V 200 hFE-2 DC current gain IC=-4A ; VCE=-2V 70 Cob Output capacitance IE=0 ; VCB=-10V f=1MHz 62 pF fT Transition frequency IC=-500mA ; VCE=-2V 170 MHz 2 |
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