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BT151-600 Datasheet(PDF) 1 Page - Inchange Semiconductor Company Limited |
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BT151-600 Datasheet(HTML) 1 Page - Inchange Semiconductor Company Limited |
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1 / 1 page ![]() Thyristors INCHANGE BT151-600 Features ·With TO-220 package ·1cathode 2 anode 3 gate ·For use in applications requiring high bidirectional blocking voltage capability and high thermal cycling performance. Typical applications include motor control, industrial and domestic lighting, heating and static switching. QUICK REFERENCE DATA SYMBOL PARAMETER MIN UNIT VDRM Repetitive peak off-state voltage 600 V VRRM Repetitive peak reverse voltage 600 V IT(AV) Average on-state current 7.5 A IT(RMS) RMS on-state current 12 A ITSM Non-repetitive peak on-state current 100 A PGM Peak gate power 5 W PG(AV) Average gate power 0.5 W Tstg Storage temperature -45~150 ℃ Tj Operating junction temperature 110 ℃ TO-220 LIMITING VALUES Limiting values in accordance with the absolute maximum system(IEC 134) SYMBOL PARAMETER CONDITIONS MIN MAX UNIT VDRM Repetitive peak off-state voltage 600 V VRRM Repetitive peak reverse voltage 600 V IGT Gate trigger current VD=12V; IT=0.1A 15 mA VT On-state voltage IT=23A 1.75 V VGT Gate trigger voltage VD=12V ; IT=0.1A 1.5 V |
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