BAS170WS datasheet(1/1 Pages) KEXIN

Part #	BAS170WS

Description	Schottky Diodes

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Manufacturer	KEXIN [Guangdong Kexin Industrial Co.,Ltd]

Direct Link	http://www.kexin.com.cn/index.asp

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Diodes

Unit: mm

SOD-323

1.7+0.1

-0.1

2.6+0.1

-0.1

0.475

0.375

0.85+0.05

-0.05

1.0max

Features

Schottky diode for high-speed switching

Circuit protection

Voltage clamping

High-level detecting and mixing

Absolute Maximum Ratings Ta = 25

PARAMATER

SYMBOL

TEST CONDITION

VALUE

UNIT

Repetitive peak reverse voltage

VRM

70

V

Forward continuous current

IF

Tamb =25

70

mA

Surge forward current

IFSM

tp <1s, Tamb =25

600

mA

Power Dissipation

(1)

Ptot

Tamb =25

200

mW

Thermal resistance junction to ambient air

(1)

RèJA

650

/W

Junction temperature

Tj

150

Operating temperature range

Ramb

-55 to+125

Storage temperature range

Ts

-55 to+125

1.valid provided that electrodes are kept at ambient temperature

Electrical Characteristics Ta = 25

PARAMATER

SYMBOL

TEST CONDITION

MIN

TYP

MAX

UNIT

Reverse breakdown voltage

V(BR)R

IR =10

A(Pulse)

70

V

VR =50 V

0.1

A

VR =70 V

10

A

IF = 200 mA

375

410

V

I < tief < F = 10 mA

705

750

V

Forward voltage

(1)

VF

VF = 15 mA

880

1000

mV

Capacitance

Ctot

VR =0 V, f =1 MHz

1.5

2

pF

Charge carrier lifetime

t

IF = 25 mA;

100

ps

Differential forward resistance

RF

IE =5mA;f=10 kHz

34

Note:

1.Pulse test: tp

300

s

Leakage current

Forward voltage

VF

IR

Marking

73

Schottky Diodes

BAS170WS

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BAS170WS Datasheet(PDF) 1 Page - Guangdong Kexin Industrial Co.,Ltd

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