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TCDT1124 Datasheet(PDF) 5 Page - Vishay Siliconix |
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TCDT1124 Datasheet(HTML) 5 Page - Vishay Siliconix |
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5 / 10 page ![]() TCDT1120/ TCDT1120G Document Number 83532 Rev. 1.6, 26-Oct-04 Vishay Semiconductors www.vishay.com 5 Typical Characteristics (Tamb = 25 °C unless otherwise specified) Figure 3. Switching Times Figure 4. Total Power Dissipation vs. Ambient Temperature Figure 5. Forward Current vs. Forward Voltage tp t t 0 0 10% 90% 100% tr td ton ts tf toff IF IC 96 11698 tp pulse duration td delay time tr rise time ton (= td +tr) turn-on time ts storage time tf fall time toff (= ts +tf) turn-off time 0 50 100 150 200 250 300 0 40 80 120 Tamb – Ambient Temperature( °C ) 96 11700 Coupled device Phototransistor IR-diode 0.1 1 10 100 1000 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 VF - Forward Voltage(V) 96 11862 Figure 6. Relative Current Transfer Ratio vs. Ambient Temperature Figure 7. Collector Dark Current vs. Ambient Temperature Figure 8. Collector Current vs. Forward Current 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 1.3 1.4 1.5 –30 –20 –10 0 1020 304050607080 Tamb – Ambient Temperature (°C ) 96 11918 VCE=5V IF=10mA 025 50 75 1 10 100 1000 10000 Tamb– Ambient Temperature ( °C ) 100 95 11038 VCE=30V IF=0 0.1 1 10 0.01 0.1 1 100 IF – Forward Current ( mA ) 100 95 11040 10 VCE=5V |
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