MJ11033 datasheet(1/2 Pages) ISC

Part #	MJ11033

Description	isc Silicon PNP Darlington Power Transistor

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Manufacturer	ISC [Inchange Semiconductor Company Limited]

Direct Link	http://www.iscsemi.cn

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INCHANGE Semiconductor

isc Product Specification

isc Website：www.iscsemi.cn

isc Silicon PNP Darlington Power Transistor

MJ11033

DESCRIPTION

·Collector-Emitter Breakdown Voltage

: V(BR)CEO= -120V(Min.)

·High DC Current Gain-

: hFE= 1000(Min.)@IC= -25A

: hFE= 400(Min.)@IC= -50A

·Complement to Type MJ11032

APPLICATIONS

·Designed for use as output devices in complementary

general purpose amplifier applications.

ABSOLUTE MAXIMUM RATINGS (Ta=25℃)

SYMBOL

PARAMETER

VALUE

UNIT

VCBO

Collector-Base Voltage

-120

V

VCEO

Collector-Emitter Voltage

-120

V

VEBO

Emitter-Base Voltage

-5

V

IC

Collector Current-Continunous

-50

A

ICM

Collector Current-Peak

-100

A

IB

Base Current-Continunous

-2

A

PC

Collector Power Dissipation

@TC=25℃

300

W

Tj

Junction Temperature

200

℃

Tstg

Storage Temperature Range

-55~+200

℃

THERMAL CHARACTERISTICS

SYMBOL

PARAMETER

MAX

UNIT

Rth j-c

Thermal Resistance, Junction to Case

0.584

℃/W

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