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2SB679 Datasheet(PDF) 2 Page - Inchange Semiconductor Company Limited |
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2SB679 Datasheet(HTML) 2 Page - Inchange Semiconductor Company Limited |
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2 / 2 page ![]() INCHANGE Semiconductor isc Product Specification isc Silicon PNP Power Transistor 2SB679 ELECTRICAL CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)CEO Collector-Emitter Breakdown Voltage IC= -100mA ;IB= 0 -120 V V(BR)EBO Emitter-Base Breakdown Voltage IE= -10mA ;IC= 0 -5 V VCE(sat) Collector-Emitter Saturation Voltage IC= -10A; IB= -1A -3.0 V VBE(on) Base-Emitter On Voltage IC= -10A ; VCE= -5V -2.5 V ICBO Collector Cutoff Current VCB= -50V; IE= 0 -0.1 mA IEBO Emitter Cutoff Current VEB= -5V; IC= 0 -0.1 mA hFE-1 DC Current Gain IC= -2A ; VCE= -5V 40 140 hFE-2 DC Current Gain IC= -7A ; VCE= -5V 15 COB Output Capacitance VCB= -10V; ftest= 1MHz 900 pF fT Current-Gain—Bandwidth Product IC= -2A ; VCE= -5V 6 MHz hFE-1 Classifications R Y 40-80 70-140 isc Website:www.iscsemi.cn |
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