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2SA1718 Datasheet(PDF) 2 Page - Inchange Semiconductor Company Limited |
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2SA1718 Datasheet(HTML) 2 Page - Inchange Semiconductor Company Limited |
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2 / 3 page ![]() Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2SA1718 CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)CEO Collector-emitter breakdown voltage IC=-30mA; IB=0 -100 V VCEsat Collector-emitter saturation voltage IC=-2A ; IB=-2mA -1.5 V VBEsat Base-emitter saturation voltage IC=-2A ; IB=-2mA -2.0 V ICBO Collector cut-off current VCB=-100V;IE=0 -10 μA IEBO Emitter cut-off current VEB=-7V;IC=0 -5.0 mA hFE-1 DC current gain IC=-2A ; VCE=-2V 2000 20000 hFE-2 DC current gain IC=-4A ; VCE=-2V 500 hFE classifications M L K 2000-5000 4000-10000 8000-20000 2 |
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