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BU2506AX Datasheet(PDF) 1 Page - Inchange Semiconductor Company Limited |
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BU2506AX Datasheet(HTML) 1 Page - Inchange Semiconductor Company Limited |
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1 / 2 page  INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor BU2506AX DESCRIPTION ·Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 700V (Min) ·High Switching Speed APPLICATIONS ·Designed for use in horizontal deflection circuits of color TV receivers. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCES Collector- Emitter Voltage(VBE= 0) 1500 V VCEO Collector-Emitter Voltage 700 V VEBO Emitter-Base Voltage 7.5 V IC Collector Current- Continuous 5 A ICM Collector Current-Peak 8 A IB B Base Current- Continuous 3 A IBM Base Current-Peak 5 A PC Collector Power Dissipation @ TC=25℃ 45 W TJ Junction Temperature 150 ℃ Tstg Storage Temperature Range -65~150 ℃ SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance,Junction to Case 2.8 ℃/W isc Website：www.iscsemi.cn |
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