TIP137 datasheet(1/2 Pages) ISC

Part #	TIP137

Description	isc Silicon PNP Darlington Power Transistor

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Manufacturer	ISC [Inchange Semiconductor Company Limited]

Direct Link	http://www.iscsemi.cn

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INCHANGE Semiconductor

isc Product Specification

isc Silicon PNP Darlington Power Transistor

TIP137

DESCRIPTION

·High DC Current Gain-

: hFE = 1000(Min)@ IC= -4A

·Collector-Emitter Sustaining Voltage-

: VCEO(SUS) = -100V(Min)

·Low Collector-Emitter Saturation Voltage-

: VCE(sat) = -2.0V(Max)@ IC= -4A

·Complement to Type TIP132

APPLICATIONS

·Designed for general-purpose amplifier and low-speed

switching applications

ABSOLUTE MAXIMUM RATINGS(Ta=25℃)

SYMBOL

PARAMETER

VALUE

UNIT

VCBO

Collector-Base Voltage

-100

V

VCEO

Collector-Emitter Voltage

-100

V

VEBO

Emitter-Base Voltage

-5

V

IC

Collector Current-Continuous

-8

A

ICM

Collector Current-Peak

-12

A

IB

B

Base Current- Continuous

-0.3

A

Collector Power Dissipation

@TC=25℃

70

PC

Collector Power Dissipation

@Ta=25℃

2

W

Tj

Junction Temperature

150

℃

Tstg

Storage Temperature Range

-65~150

℃

THERMAL CHARACTERISTICS

SYMBOL

PARAMETER

MAX

UNIT

Rth j-c

Thermal Resistance,Junction to Case

1.785

℃/W

Rth j-a

Thermal Resistance,Junction to Ambient

63.5

℃/W

isc Website：www.iscsemi.cn

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