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2SB673 Datasheet(PDF) 1 Page - Inchange Semiconductor Company Limited

Part # 2SB673
Description  isc Silicon PNP Darlington Power Transistor
PDF  2 Pages
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Manufacturer  ISC [Inchange Semiconductor Company Limited]
Direct Link  http://www.iscsemi.cn
Logo ISC - Inchange Semiconductor Company Limited

2SB673 Datasheet(HTML) 1 Page - Inchange Semiconductor Company Limited

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INCHANGE Semiconductor
isc Product Specification
isc Silicon PNP Darlington Power Transistor
2SB673
DESCRIPTION
·High DC Current Gain-
: hFE = 2000(Min)@ IC= -3A
·Collector-Emitter Breakdown Voltage-
: V(BR)CEO = -100V(Min)
·Low Collector Saturation Voltage-
: VCE(sat) = -1.5V(Max)@ IC= -3A
·Complement to Type 2SD633
APPLICATIONS
·High power switching applications.
·Hammer drive, pulse motor drive applications.
ABSOLUTE MAXIMUM RATINGS (Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
-100
V
VCEO
Collector-Emitter Voltage
-100
V
VEBO
Emitter-Base Voltage
-5
V
IC
Collector Current-Continuous
-7
A
IB
B
Base Current-DC
-0.2
A
PC
Collector Power Dissipation
TC=25℃
40
W
Tj
Junction Temperature
150
℃
Tstg
Storage Temperature Range
-55~150
℃
isc Website：www.iscsemi.cn


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