2SB1382 datasheet(1/2 Pages) ISC

Part #	2SB1382

Description	isc Silicon PNP Darlington Power Transistor

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Manufacturer	ISC [Inchange Semiconductor Company Limited]

Direct Link	http://www.iscsemi.cn

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INCHANGE Semiconductor

isc Product Specification

isc Silicon PNP Darlington Power Transistor

2SB1382

DESCRIPTION

·Collector-Emitter Breakdown Voltage-

: V(BR)CEO= -120V(Min)

·High DC Current Gain-

: hFE= 2000( Min.) @(IC= -8A, VCE= -4V)

·Low Collector Saturation Voltage-

: VCE(sat)= -1.5V(Max)@ (IC= -8A, IB= -16mA)

B

·Complement to Type 2SD2082

APPLICATIONS

·Designed for chopper regulator, DC motor driver and

general purpose applications.

ABSOLUTE MAXIMUM RATINGS(Ta=25℃)

SYMBOL

PARAMETER

VALUE

UNIT

VCBO

Collector-Base Voltage

-120

V

VCEO

Collector-Emitter Voltage

-120

V

VEBO

Emitter-Base Voltage

-6

V

IC

Collector Current-Continuous

-16

A

ICM

Collector Current-Peak

-26

A

IB

Base Current-Continuous

-1

A

PC

Collector Power Dissipation

@TC=25℃

75

W

TJ

Junction Temperature

150

℃

Tstg

Storage Temperature

-55~150

℃

isc Website：www.iscsemi.cn

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