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2SD1192 Datasheet(PDF) 1 Page - Inchange Semiconductor Company Limited |
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2SD1192 Datasheet(HTML) 1 Page - Inchange Semiconductor Company Limited |
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1 / 2 page  INCHANGE Semiconductor isc Product Specification isc Website：www.iscsemi.cn isc Silicon NPN Darlington Power Transistor 2SD1192 DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 60V(Min) ·High DC Current Gain : hFE= 2000(Min) @IC= 5.0A ·Low Saturation Voltage ·Complement to Type 2SB882 APPLICATIONS ·Designed for motor drivers, printer hammer drivers, relay drivers, voltage regulator control applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 70 V VCEO Collector-Emitter Voltage 60 V VEBO Emitter-Base Voltage 6 V IC Collector Current-Continuous 10 A ICP Collector Current-Peak 15 A Collector Power Dissipation @ Ta=25℃ 1.75 PC Collector Power Dissipation @ TC=25℃ 40 W TJ Junction Temperature 150 ℃ Tstg Storage Temperature Range -55~150 ℃ |
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