2N6837 datasheet(2/2 Pages) ISC

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INCHANGE Semiconductor

isc Product Specification

isc Silicon NPN Power Transistor

2N6837

ELECTRICAL CHARACTERISTICS

TC=25℃ unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

MIN

TYP.

MAX

UNIT

VCEO(SUS)

Collector-Emitter Sustaining Voltage

IC=100mA ; IB=0

450

VCE(sat)-1

Collector-Emitter Saturation Voltage

IC= 10A; IB= 1.2A

1.0

VCE(sat)-2

Collector-Emitter Saturation Voltage

IC= 15A; IB= 2A

IC= 15A; IB= 2A,TC=100℃

3.0

VBE(sat)

Base-Emitter Saturation Voltage

IC= 15A; IB= 2A

IC= 15A; IB= 2A,TC=100℃

1.5

ICEV

Collector Cutoff Current

VCEV=850V;VBE(off)= 1.5V

VCEV=850V;VBE(off)= 1.5V;TC=100℃

0.25

1.5

ICER

Collector Cutoff Current

VCE= 850V; RBE= 50Ω,TC= 100℃

2.5

IEBO

Emitter Cutoff Current

VEB= 6.0V; IC=0

1.0

hFE-1

DC Current Gain

IC= 15A ; VCE= 5V

7.5

hFE-2

DC Current Gain

IC= 20A ; VCE= 5V

Current Gain-Bandwidth Product

IC= 0.25A ;VCE= 10V; ftest=10MHz

MHz

COB

Output Capacitance

IE= 0; VCB= 10V; ftest=1.0kHz

100

500

Switching times;Resistive Load

Delay Time

0.02

0.1

μs

Rise Time

0.2

0.5

μs

Storage Time

1.2

2.7

μs

Fall Time

IC= 15A , VCC= 250V;

IB1= 2A; IB2= -4A;

PW= 30μs; RB2= 1.6Ω

Duty Cycle≤2.0%

0.2

0.35

μs

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