AOD4136 datasheet(2/6 Pages) AOSMD

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AOD4136

Symbol

Min

Typ

Max

Units

BVDSS

TJ=55°C

100

IGSS

±100

VGS(th)

1.5

1.9

2.5

ID(ON)

100

TJ=125°C

gFS

VSD

0.71

Ciss

734

Coss

174

Crss

2.4

3.6

5.4

Ω

Qg (10V)

12.9

16.8

Qg (4.5V)

6.2

8.1

Qgs

2.2

Qgd

tD(on)

11.2

tD(off)

19.6

9.6

trr

Qrr

COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING

OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,

FUNCTIONS AND RELIABILITY WITHOUT NOTICE.

Drain-Source Breakdown Voltage

On state drain current

ID=250µA, VGS=0V

VGS=10V, VDS=5V

VDS=25V, VGS=0V

VDS=0V, VGS= ±20V

Zero Gate Voltage Drain Current

Gate-Body leakage current

IDSS

Body Diode Reverse Recovery Charge IF=20A, dI/dt=300A/µs

Body Diode Reverse Recovery Time

VGS=10V, ID=20A

Reverse Transfer Capacitance

IF=20A, dI/dt=300A/µs

Gate Threshold Voltage

VDS=VGS ID=250µA

Electrical Characteristics (TJ=25°C unless otherwise noted)

STATIC PARAMETERS

Parameter

Conditions

RDS(ON)

Static Drain-Source On-Resistance

Forward Transconductance

Diode Forward Voltage

Maximum Body-Diode Continuous Current

Input Capacitance

Output Capacitance

DYNAMIC PARAMETERS

VGS=4.5V, ID=15A

IS=1A,VGS=0V

VDS=5V, ID=20A

Ω

Turn-On Rise Time

Turn-Off DelayTime

VGS=10V, VDS=12.5V, RL=0.5Ω,

RGEN=3Ω

Turn-Off Fall Time

Turn-On DelayTime

Gate Drain Charge

VGS=0V, VDS=12.5V, f=1MHz

SWITCHING PARAMETERS

Total Gate Charge

TBD

Gate Source Charge

Gate resistance

VGS=0V, VDS=0V, f=1MHz

TBD

Total Gate Charge

VGS=10V, VDS=12.5V,

ID=20A

A: The value of RθJA is measured with the device in a still air environment with T A =25°C. The power dissipation P DSM and current rating IDSM

are based on TJ(MAX)=150°C, using t ≤ 10s junction-to-ambient thermal resistance.

B. The power dissipation PD is based on TJ(MAX)=175°C, using junction-to-case thermal resistance, and is more useful in setting the upper

dissipation limit for cases where additional heatsinking is used.

C: Repetitive rating, pulse width limited by junction temperature TJ(MAX)=175°C.

D. The RθJA is the sum of the thermal impedence from junction to case RθJC and case to ambient.

E. The static characteristics in Figures 1 to 6 are obtained using <300

µs pulses, duty cycle 0.5% max.

F. These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink, assuming

a maximum junction temperature of TJ(MAX)=175°C. The SOA curve provides a single pulse ratin g.

G. These tests are performed with the device mounted on 1 in

2 FR-4 board with 2oz. Copper, in a still air environment with T

A=25°C.

H. The maximum current rating is limited by bond-wires.

*This device is guaranteed green after data code 8X11 (Sep 1

ST 2008).

Rev1: Oct 2008

Alpha & Omega Semiconductor, Ltd.

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