Symbol

Parameter

Test Conditions

Min.

Typ. Max. Units

Drain-Source Breakdown Voltage

500

-

-

V

Static Drain-Source On-Resistance

-

-

0.85

Ω

Gate Threshold Voltage

2

-

4

V

Forward Transconductance

-

4.2

-

S

-

-

25

uA

-

-

250

uA

Gate-Source Leakage

-

-

±100

nA

Total Gate Charge

3

-

45

72

nC

Gate-Source Charge

-

7

-

nC

Gate-Drain ("Miller") Charge

-

25

-

nC

Turn-on Delay Time

3

-

12

-

ns

Rise Time

-

31

-

ns

Turn-off Delay Time

-

48

-

ns

Fall Time

-33

-

ns

Input Capacitance

-

1250 2000

pF

Output Capacitance

-

270

-

pF

Reverse Transfer Capacitance

f=1.0MHz

-

85

-

pF

Gate Resistance

f=1.0MHz

-

1.6

2.4

Ω

Source-Drain Diode

Symbol

Parameter

Test Conditions

Min.

Typ. Max. Units

Forward On Voltage

3

-

-

1.5

V

Reverse Recovery Time

3

-

515

-

ns

Reverse Recovery Charge

dI/dt=100A/µs

-

8.6

-

uC

Notes:

1.Pulse width limited by Max. junction temperature.

3.Pulse test

THIS PRODUCT HAS BEEN QUALIFIED FOR USE IN CONSUMER APPLICATIONS. APPLICATIONS OR USE IN LIFE SUPPORT

OR OTHER SIMILAR MISSION-CRITICAL DEVICES OR SYSTEMS ARE NOT AUTHORIZED.

2/4

THIS PRODUCT IS ELECTROSTATIC SENSITIVE, PLEASE HANDLE WITH CAUTION.

IRF840