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TSHA4401 Datasheet(PDF) 2 Page - Vishay Siliconix

Part # TSHA4401
Description  GaAlAs Infrared Emitting Diodes in ø 3 mm (T–1) Package
PDF  5 Pages
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Manufacturer  VISHAY [Vishay Siliconix]
Direct Link  http://www.vishay.com
Logo VISHAY - Vishay Siliconix

TSHA4401 Datasheet(HTML) 2 Page - Vishay Siliconix

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TSHA440.
Vishay Telefunken
2 (5)
Rev. 2, 20-May-99
www.vishay.de
• FaxBack +1-408-970-5600
Document Number 81017
Basic Characteristics
Tamb = 25_C
Parameter
Test Conditions
Symbol
Min
Typ
Max
Unit
Forward Voltage
IF = 100 mA, tp = 20 ms
VF
1.5
1.8
V
g
IF = 1.5 A, tp = 100 ms
VF
3.2
4.9
V
Temp. Coefficient of VF
IF = 100mA
TKVF
–1.6
mV/K
Reverse Current
VR = 5 V
IR
100
mA
Junction Capacitance
VR = 0 V, f = 1 MHz, E = 0
Cj
20
pF
Temp. Coefficient of
fe
IF = 100 mA
TKfe
–0.7
%/K
Angle of Half Intensity
ϕ
±20
deg
Peak Wavelength
IF = 100 mA
lp
875
nm
Spectral Bandwidth
IF = 100 mA
Dl
80
nm
Temp. Coefficient of
lp
IF = 100 mA
TKlp
0.2
nm/K
Rise Time
IF = 100 mA
tr
600
ns
IF = 1.5 A
tr
300
ns
Fall Time
IF = 100 mA
tf
600
ns
IF = 1.5 A
tf
300
ns
Type Dedicated Characteristics
Tamb = 25_C
Parameter
Test Conditions
Type
Symbol
Min
Typ
Max
Unit
Radiant Intensity
IF=100mA, tp=20ms
TSHA4400
Ie
12
20
mW/sr
y
F
TSHA4401
Ie
16
30
mW/sr
IF=1.5A, tp=100ms
TSHA4400
Ie
140
240
mW/sr
F
m
TSHA4401
Ie
190
360
mW/sr
Radiant Power
IF=100mA, tp=20ms
TSHA4400
fe
20
mW
F
TSHA4401
fe
24
mW
Typical Characteristics (Tamb = 25_C unless otherwise specified)
0
20
406080
0
50
100
150
200
250
Tamb – Ambient Temperature ( °C )
100
12789
RthJA
Figure 1. Power Dissipation vs. Ambient Temperature
0
20
406080
0
25
50
75
100
125
Tamb – Ambient Temperature ( °C )
100
94 7941 e
Figure 2. Forward Current vs. Ambient Temperature



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