TSHF5200 datasheet(2/6 Pages) VISHAY

2 / 6 page

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Document Number 81023

Rev. 1.5, 08-Mar-05

TSHF5200

Vishay Semiconductors

Basic Characteristics

Tamb = 25 °C, unless otherwise specified

Typical Characteristics (Tamb = 25

°C unless otherwise specified)

Parameter

Test condition

Symbol

Min

Typ.

Max

Unit

Forward Voltage

IF = 100 mA, tp = 20 ms

1.35

1.6

IF = 1 A, tp = 100 µsVF

2.4

Temp. Coefficient of VF

IF = 100 mA

TKVF

-1.7

mV/K

Reverse Current

VR = 5 V

µA

Junction capacitance

VR = 0 V, f = 1 MHz, E = 0

160

Radiant Intensity

IF = 100 mA, tp = 20 ms

100

400

mW/sr

IF = 1 A, tp = 100 µsIe

1000

mW/sr

Radiant Power

IF = 100 mA, tp = 20 ms

Temp. Coefficient of

IF = 100 mA

- 0.7

%/K

Angle of Half Intensity

± 10

deg

Peak Wavelength

IF = 100 mA

870

Spectral Bandwidth

IF = 100 mA

∆λ

Temp. Coefficient of

IF = 100 mA

0.2

nm/K

Rise Time

IF = 100 mA

Fall Time

IF = 100 mA

Virtual Source Diameter

∅

3.7

Figure 1. Power Dissipation vs. Ambient Temperature

100

120

140

160

180

1020 3040 5060 7080 90 100

Tamb – Ambient Temperature (°C )

16084

Figure 2. Forward Current vs. Ambient Temperature

100

120

1020 3040 5060 7080 90 100

Tamb – Ambient Temperature (°C )

16085

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