AON7403L datasheet(2/4 Pages) AOSMD

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AON7403

Symbol

Min

Typ

Max

Units

BVDSS

-30

-1

TJ=55°C

-5

IGSS

±100

VGS(th)

-1.7

-2.2

-3

ID(ON)

-80

TJ=125°C

gFS

VSD

-0.7

-1

-3

Ciss

1130

1400

Coss

240

Crss

155

5.8

Ω

Qgs

5.5

Qgd

3.3

tD(on)

8.7

8.5

tD(off)

7ns

trr

Qrr

150

COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING

OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,

FUNCTIONS AND RELIABILITY WITHOUT NOTICE.

Drain-Source Breakdown Voltage

On state drain current

ID=-250µA, VGS=0V

VGS=-10V, VDS=-5V

VDS=-30V, VGS=0V

VDS=0V, VGS= ±25V

Zero Gate Voltage Drain Current

Gate-Body leakage current

IDSS

Body Diode Reverse Recovery Charge IF=-8A, dI/dt=500A/µs

Body Diode Reverse Recovery Time

VGS=-10V, ID=-8A

Reverse Transfer Capacitance

IF=-8A, dI/dt=500A/µs

Gate Threshold Voltage

VDS=VGS ID=-250µA

Electrical Characteristics (TJ=25°C unless otherwise noted)

STATIC PARAMETERS

Parameter

Conditions

VGS=-4.5V, ID=-6A

IS=-1A,VGS=0V

VDS=-5V, ID=-10A

Turn-On Rise Time

Turn-Off DelayTime

VGS=-10V, VDS=-15V, RL=1.8Ω,

RGEN=3Ω

Turn-Off Fall Time

Turn-On DelayTime

Gate Source Charge

Gate resistance

VGS=0V, VDS=0V, f=1MHz

Total Gate Charge

VGS=-10V, VDS=-15V, ID=-8A

Gate Drain Charge

SWITCHING PARAMETERS

Maximum Body-Diode Continuous Current

Output Capacitance

DYNAMIC PARAMETERS

RDS(ON)

Ω

VGS=0V, VDS=-15V, f=1MHz

Input Capacitance

Static Drain-Source On-Resistance

Forward Transconductance

Diode Forward Voltage

A: The value of RθJA is measured with the device in a still air environment with T A =25°C. The power dissipation PDSM and current rating IDSM are

based on TJ(MAX)=150°C, using steady state junction-to-ambient thermal resistance.

B. The power dissipation PD is based on TJ(MAX)=150°C, using junction-to-case thermal resistance, and is more useful in setting the upper

dissipation limit for cases where additional heatsinking is used.

C: Repetitive rating, pulse width limited by junction temperature T J(MAX)=150°C.

D. The RθJA is the sum of the thermal impedence from junction to case R θJC and case to ambient.

E. The static characteristics in Figures 1 to 6 are obtained using <300

µs pulses, duty cycle 0.5% max.

F. These tests are performed with the device mounted on 1 in

2 FR-4 board with 2oz. Copper, in a still air environment with T

A=25°C.

The SOA curve provides a single pulse rating.

G. The maximum current rating is limited by bond-wires.

Rev0: Jun 2008

Alpha & Omega Semiconductor, Ltd.

AON7403L Datasheet(PDF) 2 Page - Alpha & Omega Semiconductors

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