AOTF12N50 datasheet(2/6 Pages) AOSMD

2 / 6 page

AOT12N50/AOTF12N50

Symbol

Min

Typ

Max

Units

500

600

BVDSS

/∆TJ

0.54

IGSS

±100

VGS(th)

3.3

3.9

4.5

RDS(ON)

0.36

0.52

Ω

gFS

VSD

0.72

ISM

Ciss

1089

1361

1633

Coss

134

167

200

Crss

12.6

1.8

3.6

Ω

30.7

Qgs

7.6

Qgd

13.0

tD(on)

35.0

83.0

tD(off)

98.0

55.5

67.0

trr

231

277.0

Qrr

2.82

3.4

µC

4.4

THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL

COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING

OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,

FUNCTIONS AND RELIABILITY WITHOUT NOTICE.

BVDSS

Drain-Source Breakdown Voltage

ID=250µA, VGS=0V, TJ=150°C

Body Diode Reverse Recovery Charge IF=12A,dI/dt=100A/µs,VDS=100V

Maximum Body-Diode Continuous Current

Input Capacitance

Output Capacitance

Turn-On DelayTime

DYNAMIC PARAMETERS

Turn-On Rise Time

Turn-Off DelayTime

VGS=10V, VDS=250V, ID=12A,

RG=25Ω

Gate resistance

VGS=0V, VDS=0V, f=1MHz

Turn-Off Fall Time

Total Gate Charge

VGS=10V, VDS=400V, ID=12A

Gate Source Charge

Gate Drain Charge

Static Drain-Source On-Resistance

Forward Transconductance

Diode Forward Voltage

IS=1A, VGS=0V

VDS=40V, ID=6A

Electrical Characteristics (TJ=25°C unless otherwise noted)

STATIC PARAMETERS

Parameter

Conditions

Body Diode Reverse Recovery Time

ID=250µA, VGS=0V, TJ=25°C

VGS=10V, ID=6A

Reverse Transfer Capacitance

IF=12A,dI/dt=100A/µs,VDS=100V

VGS=0V, VDS=25V, f=1MHz

SWITCHING PARAMETERS

IDSS

µA

Maximum Body-Diode Pulsed Current

VDS=400V, TJ=125°C

Breakdown Voltage Temperature

Coefficient

ID=250µA, VGS=0V

Gate Threshold Voltage

VDS=5V, ID=250µA

VDS=500V, VGS=0V

VDS=0V, VGS=±30V

Zero Gate Voltage Drain Current

Gate-Body leakage current

A: The value of R θJA is measured with the device in a still air environment with T A =25°C.

B. The power dissipation PD is based on TJ(MAX)=150°C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation

limit for cases where additional heatsinking is used.

C: Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C.

D. The R θJA is the sum of the thermal impedence from junction to case R θJC and case to ambient.

E. The static characteristics in Figures 1 to 6 are obtained using <300

µs pulses, duty cycle 0.5% max.

F. These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink, assuming a

maximum junction temperature of TJ(MAX)=150°C.

G. L=60mH, IAS=5.5A, VDD=50V, RG=25Ω, Starting TJ=25°C

Rev 2. Dec 2008

Alpha & Omega Semiconductor, Ltd.

AOTF12N50 Datasheet(PDF) 2 Page - Alpha & Omega Semiconductors

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