AOTF12N60 datasheet(2/6 Pages) AOSMD

2 / 6 page

AOT12N60 / AOTF12N60

Symbol

Min

Typ

Max

Units

600

700

BVDSS

/∆TJ

0.65

IGSS

±100

VGS(th)

345

RDS(ON)

0.46

0.55

Ω

gFS

VSD

0.72

ISM

Ciss

1400

1751

2100

Coss

130

164

200

Crss

2.5

3.3

Ω

40.5

Qgs

8.7

Qgd

17.9

tD(on)

tD(off)

122

150

trr

311

373

Qrr

5.2

6.2

µC

THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL

COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING

OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,

FUNCTIONS AND RELIABILITY WITHOUT NOTICE.

Body Diode Reverse Recovery Charge IF=12A,dI/dt=100A/µs,VDS=100V

Maximum Body-Diode Continuous Current

Input Capacitance

Output Capacitance

Turn-On DelayTime

DYNAMIC PARAMETERS

Turn-On Rise Time

Turn-Off DelayTime

VGS=10V, VDS=300V, ID=12A,

RG=25Ω

Total Gate Charge

VGS=10V, VDS=480V, ID=12A

Gate Source Charge

Gate Drain Charge

Electrical Characteristics (TJ=25°C unless otherwise noted)

STATIC PARAMETERS

Parameter

Conditions

ID=250µA, VGS=0V, TJ=25°C

VGS=10V, ID=6A

Reverse Transfer Capacitance

IF=12A,dI/dt=100A/µs,VDS=100V

VGS=0V, VDS=25V, f=1MHz

SWITCHING PARAMETERS

IDSS

µA

Static Drain-Source On-Resistance

Forward Transconductance

VDS=0V, VGS=±30V

Zero Gate Voltage Drain Current

Gate-Body leakage current

Body Diode Reverse Recovery Time

Diode Forward Voltage

IS=1A, VGS=0V

VDS=40V, ID=6A

Gate resistance

VGS=0V, VDS=0V, f=1MHz

Turn-Off Fall Time

BVDSS

Drain-Source Breakdown Voltage

ID=250µA, VGS=0V, TJ=150°C

Maximum Body-Diode Pulsed Current

VDS=480V, TJ=125°C

Breakdown Voltage Temperature

Coefficient

ID=250µA, VGS=0V

Gate Threshold Voltage

VDS=VGS, ID=250µA

VDS=600V, VGS=0V

A: The value of R θJA is measured with the device in a still air environment with T A =25°C.

B. The power dissipation PD is based on TJ(MAX)=150°C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation

limit for cases where additional heatsinking is used.

C: Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C.

D. The R θJA is the sum of the thermal impedence from junction to case R θJC and case to ambient.

E. The static characteristics in Figures 1 to 6 are obtained using <300

µs pulses, duty cycle 0.5% max.

F. These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink, assuming a

maximum junction temperature of TJ(MAX)=150°C.

G. L=60mH, IAS=5.5A, VDD=50V, RG=25Ω, Starting TJ=25°C

Rev 0. July 2008

Alpha & Omega Semiconductor, Ltd.

AOTF12N60 Datasheet(PDF) 2 Page - Alpha & Omega Semiconductors

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