AOTF404 datasheet(1/6 Pages) AOSMD

Part #	AOTF404

Description	N-Channel Enhancement Mode Field Effect Transistor

PDF	6 Pages

Scroll/Zoom	100%

Manufacturer	AOSMD [Alpha & Omega Semiconductors]

Direct Link	http://www.aosmd.com

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1 / 6 page

Symbol

VDS

VGS

IDM

IAR

EAR

TJ, TSTG

Symbol

Typ

Max

10

12

48.5

58

RθJC

2.9

3.5

Maximum Junction-to-Case

B

Steady-State

°C/W

Thermal Characteristics

Parameter

Units

Maximum Junction-to-Ambient

A

t

≤ 10s

RθJA

°C/W

Maximum Junction-to-Ambient

A D

Steady-State

°C/W

°C

Power Dissipation

A

TA=25°C

PDSM

2.2

TA=70°C

1.38

Junction and Storage Temperature Range

-55 to 175

Avalanche Current

C

37

A

Repetitive avalanche energy L=0.1mH

C

68

mJ

A

TC=100°C

18

Pulsed Drain Current

C

90

Continuous Drain

Current

TC=25°C

ID

26

Drain-Source Voltage

105

V

Gate-Source Voltage

±25

V

Absolute Maximum Ratings TA=25°C unless otherwise noted

Parameter

Maximum

Units

Power Dissipation

B

TC=25°C

PD

43

W

TC=100°C

21

W

Continuous Drain

Current

IDSM

A

TA=70°C

4.5

TA=25°C

5.8

AOTF404

N-Channel Enhancement Mode Field Effect Transistor

Features

VDS (V) = 105V

ID = 26 A

(VGS =10V)

RDS(ON) < 28 mΩ (VGS =10V)

RDS(ON) < 31 mΩ (VGS = 6V)

100% UIS Tested!

General Description

The AOTF404/L uses advanced trench technology and

design to provide excellent RDS(ON) with low gate charge.

This device is suitable for use in high voltage

synchronous rectification , load switching and general

purpose applications.

-RoHS Compliant

-AOTF404L Halogen Free

G

D

S

TO-220FL

D

G

S

Alpha & Omega Semiconductor, Ltd.

www.aosmd.com

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AOTF404 Datasheet(PDF) 1 Page - Alpha & Omega Semiconductors

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