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TSTA7100 Datasheet(PDF) 2 Page - Vishay Siliconix

Part # TSTA7100
Description  GaAlAs IR Emitting Diode in Hermetically Sealed TO18 Case
PDF  6 Pages
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Manufacturer  VISHAY [Vishay Siliconix]
Direct Link  http://www.vishay.com
Logo VISHAY - Vishay Siliconix

TSTA7100 Datasheet(HTML) 2 Page - Vishay Siliconix

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TSTA7100
Vishay Telefunken
2 (6)
Rev. 2, 20-May-99
www.vishay.de
• FaxBack +1-408-970-5600
Document Number 81044
Basic Characteristics
Tamb = 25_C
Parameter
Test Conditions
Symbol
Min
Typ
Max
Unit
Forward Voltage
IF = 100 mA, tp x 20 ms
VF
1.4
1.8
V
Breakdown Voltage
IR = 100 mA
V(BR)
5
V
Junction Capacitance
VR = 0 V, f = 1 MHz, E = 0
Cj
20
pF
Radiant Intensity
IF = 100 mA, tp x 20 ms
Ie
20
50
mW/sr
Radiant Power
IF = 100 mA, tp x 20 ms
fe
10
mW
Temp. Coefficient of
fe
IF = 100 mA
TKfe
–0.7
%/K
Angle of Half Intensity
ϕ
±5
deg
Peak Wavelength
IF = 100 mA
lp
875
nm
Spectral Bandwidth
IF = 100 mA
Dl
80
nm
Rise Time
IF = 1.5 A, tp/T = 0.01,
tp x 10 ms
tr
300
ns
Fall Time
IF = 1.5 A, tp/T = 0.01,
tp x 10 ms
tf
300
ns
Typical Characteristics (Tamb = 25_C unless otherwise specified)
0
25
50
75
100
0
200
400
600
Tamb – Ambient Temperature ( °C )
125
12790
RthJA
100
300
500
RthJC
Figure 1. Power Dissipation vs. Ambient Temperature
0
20
406080
0
25
50
75
100
125
Tamb – Ambient Temperature ( °C )
100
94 7971 e
RthJA
RthJC
Figure 2. Forward Current vs. Ambient Temperature



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