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TSTS710 Datasheet(PDF) 2 Page - Vishay Siliconix

Part # TSTS710
Description  GaAs IR Emitting Diodes in Hermetically Sealed TO18 Case
PDF  5 Pages
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Manufacturer  VISHAY [Vishay Siliconix]
Direct Link  http://www.vishay.com
Logo VISHAY - Vishay Siliconix

TSTS710 Datasheet(HTML) 2 Page - Vishay Siliconix

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TSTS710.
Vishay Telefunken
2 (5)
Rev. 2, 20-May-99
www.vishay.de
• FaxBack +1-408-970-5600
Document Number 81047
Basic Characteristics
Tamb = 25_C
Parameter
Test Conditions
Symbol
Min
Typ
Max
Unit
Forward Voltage
IF = 100 mA, tp x 20 ms
VF
1.3
1.7
V
Breakdown Voltage
IR = 100 mA
V(BR)
5
V
Junction Capacitance
VR = 0 V, f = 1 MHz, E = 0
Cj
30
pF
Radiant Power
IF = 100 mA, tp x 20 ms
fe
7
mW
Temp. Coefficient of
fe
IF = 100 mA
TKfe
–0.8
%/K
Angle of Half Intensity
ϕ
±5
deg
Peak Wavelength
IF = 100 mA
lp
950
nm
Spectral Bandwidth
IF = 100 mA
Dl
50
nm
Rise Time
IF = 1.5 A, tp/T = 0.01,
tp x 10 ms
tr
400
ns
Fall Time
IF = 1.5 A, tp/T = 0.01,
tp x 10 ms
tf
400
ns
Type Dedicated Characteristics
Tamb = 25_C
Parameter
Test Conditions
Type
Symbol
Min
Typ
Max
Unit
Radiant Intensity
IF=100mA, tp=20ms
TSTS7100
Ie
10
mW/sr
y
F
TSTS7101
Ie
12.5
25
mW/sr
TSTS7102
Ie
20
40
mW/sr
TSTS7103
Ie
32
64
mW/sr
Typical Characteristics (Tamb = 25_C unless otherwise specified)
0
25
50
75
100
0
200
400
600
Tamb – Ambient Temperature ( °C )
125
94 8017 e
RthJA
100
300
500
RthJC
Figure 1. Power Dissipation vs. Ambient Temperature
0
20
406080
0
50
100
150
200
300
Tamb – Ambient Temperature ( °C )
100
94 8018 e
RthJC
250
RthJA
Figure 2. Forward Current vs. Ambient Temperature



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